1200 V Silicon Carbide (SiC) Diodes, MOSFETs, and Modules

ROHM introduces its next generation of SiC power devices and modules for improved power savings in many applications

Image of Rohm Semiconductor's 1200 V Silicon Carbide SiC DiodesSiC is emerging as the most viable candidate in the search for a next-generation, low-loss element due to its low ON resistance and superior characteristics under high temperatures. ROHM is developing SiC power devices and modules for improved power savings in a number of applications, from high efficiency inverters in DC/AC converters for solar/wind power supplies and electric/hybrid vehicles to power inverters for industrial equipment and air conditioners.

Features Applications
  • Low ON resistance
  • Fast switching speed
  • Fast reverse recovery
  • Easy to parallel
  • Simple to driver
  • Pb-free lead plating
  • RoHS-compliant
  • Solar inverters
  • DC/DC converters
  • Switch-mode power supplies
  • Induction heating
  • Motor drives

1200 V Silicon Carbide SiC Diodes

BildTillverkarens artikelnummerBeskrivningAvailable QuantityPris
SICFET N-CH 1200V 10A TO247SCT2450KECSICFET N-CH 1200V 10A TO2470 - Immediate$37.97Visa detaljer
SICFET N-CH 1200V 14A TO247SCT2280KECSICFET N-CH 1200V 14A TO2470 - Immediate$48.01Visa detaljer
SICFET N-CH 1200V 22A TO247SCT2160KECSICFET N-CH 1200V 22A TO2470 - Immediate$75.49Visa detaljer
SICFET N-CH 1200V 40A TO247SCT2080KECSICFET N-CH 1200V 40A TO2470 - Immediate$133.31Visa detaljer
SICFET N-CH 1200V 40A TO247SCH2080KECSICFET N-CH 1200V 40A TO2470 - ImmediateSee Page for PricingVisa detaljer
MOSFET 2N-CH 1200V 120A MODULEBSM120D12P2C005MOSFET 2N-CH 1200V 120A MODULE2 - Immediate$3,423.08Visa detaljer
MOSFET 2N-CH 1200V 204A MODULEBSM180D12P2C101MOSFET 2N-CH 1200V 204A MODULE1 - Immediate$4,938.33Visa detaljer
Published: 2015-07-06