Datablad för TIP120-22, TIP125-27 från onsemi

ON Semiconductor” www.0nseml.com
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 9
1Publication Order Number:
TIP120/D
TIP120, TIP121, TIP122
(NPN); TIP125, TIP126,
TIP127 (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
Designed for general−purpose amplifier and low−speed switching
applications.
Features
•High DC Current Gain −
hFE = 2500 (Typ) @ IC
= 4.0 Adc
•Collector−Emitter Sustaining Voltage − @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) − TIP120, TIP125
= 80 Vdc (Min) − TIP121, TIP126
= 100 Vdc (Min) − TIP122, TIP127
•Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
= 4.0 Vdc (Max) @ IC = 5.0 Adc
•Monolithic Construction with Built−In Base−Emitter Shunt Resistors
•Pb−Free Packages are Available*
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−220AB
CASE 221A
STYLE 1
MARKING
DIAGRAM
DARLINGTON
5 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80−100 VOLTS, 65 WATTS
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123
4
TIP12x = Device Code
x = 0, 1, 2, 5, 6, or 7
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
TIP12xG
AYWW
See detailed ordering and shipping information on page 3 of
this data sheet.
ORDERING INFORMATION
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
Siresses exceeding those hsled m me Maxxmum Rahngs should not be assumed‘ damage may occur and renann \c : 1 A‘ L: mo mH‘ RR F. : 10 Hz‘ vcc : 20V, REE
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
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2
MAXIMUM RATINGS
Rating Symbol
TIP120,
TIP125
TIP121,
TIP126
TIP122,
TIP127 Unit
Collector−Emitter Voltage VCEO 60 80 100 Vdc
Collector−Base Voltage VCB 60 80 100 Vdc
Emitter−Base Voltage VEB 5.0 Vdc
Collector Current −Continuous
−Peak
IC5.0
8.0
Adc
Base Current IB120 mAdc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD65
0.52
W
W/°C
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD2.0
0.016
W
W/°C
Unclamped Inductive Load Energy (Note 1) E 50 mJ
Operating and Storage Junction, Temperature Range TJ, Tstg –65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 1.92 °C/W
Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 100 mAdc, IB = 0) TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
VCEO(sus)
60
80
100
−
−
−
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0) TIP120, TIP125
(VCE = 40 Vdc, IB = 0) TIP121, TIP126
(VCE = 50 Vdc, IB = 0) TIP122, TIP127
ICEO
−
−
−
0.5
0.5
0.5
mAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0) TIP120, TIP125
(VCB = 80 Vdc, IE = 0) TIP121, TIP126
(VCB = 100 Vdc, IE = 0) TIP122, TIP127
ICBO
−
−
−
0.2
0.2
0.2
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO −2.0 mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc)
(IC = 3.0 Adc, VCE = 3.0 Vdc)
hFE 1000
1000
−
−
−
Collector−Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 12 mAdc)
(IC = 5.0 Adc, IB = 20 mAdc)
VCE(sat)
−
−
2.0
4.0
Vdc
Base−Emitter On Voltage (IC = 3.0 Adc, VCE = 3.0 Vdc) VBE(on) −2.5 Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) hfe 4.0 − −
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz TIP125, TIP126, TIP127
TIP120, TIP121, TIP122
Cob −
−
300
200
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%
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TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
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3
Figure 1. Darlington Circuit Schematic
BASE
EMITTER
COLLECTOR
≈8.0 k ≈120
BASE
EMITTER
COLLECTOR
≈8.0 k ≈120
ORDERING INFORMATION
Device Package Shipping
TIP120 TO−220 50 Units / Rail
TIP120G TO−220
(Pb−Free)
50 Units / Rail
TIP121 TO−220 50 Units / Rail
TIP121G TO−220
(Pb−Free)
50 Units / Rail
TIP122 TO−220 50 Units / Rail
TIP122G TO−220
(Pb−Free)
50 Units / Rail
TIP125 TO−220 50 Units / Rail
TIP125G TO−220
(Pb−Free)
50 Units / Rail
TIP126 TO−220 50 Units / Rail
TIP126G TO−220
(Pb−Free)
50 Units / Rail
TIP127 TO−220 50 Units / Rail
TIP127G TO−220
(Pb−Free)
50 Units / Rail
80
00 20 40 60 80 100 120 160
Figure 2. Power Derating
T, TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
40
20
60
140
TC
4.0
0
2.0
1.0
3.0
TA
TA
TC
TIP120, TIP121, TIP122 '4 @ Vaanm : 0 S‘NGIE P www.cnsemi.com
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
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4
Figure 3. Switching Times Test Circuit
5.0
0.1
Figure 4. Switching Times
IC, COLLECTOR CURRENT (AMP)
t, TIME (s)μ
2.0
1.0
0.5
0.05
0.2 0.3 0.5 0.7 1.0 2.0 3.0 10
0.3
0.7
PNP
NPN
tf
tr
ts
td @ VBE(off) = 0
V2
approx
+8.0 V
V1
approx
-12 V
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
25 ms
0
RB
51 D1
+4.0 V
VCC
-30 V
RC
TUT
≈ 8.0 k ≈ 120
SCOPE
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse all polarities.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
3.0
0.2
0.1
0.07
5.0 7.0
Figure 5. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500
ZqJC(t) = r(t) RqJC
RqJC = 1.92°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01 SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02
— — 1 ms @Tc SECOND BREAKDOWN LIMITED
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
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5
20
1.0
Figure 6. Active−Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
5.0
2.0
1.0
0.02
2.0 5.0 20 50 100
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
0.5
IC, COLLECTOR CURRENT (AMP)
TJ = 150°Cdc
1ms
100 ms
0.2
0.1
10
0.05
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
5ms
3.0 7.0 30 70
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
500 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150°C. TJ(pk) may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown
300
0.1
VR, REVERSE VOLTAGE (VOLTS)
30 2.0 5.0 10 20 100500.2 0.5 1.0
C, CAPACITANCE (pF)
100
50
TJ = 25°C
Cib
70
Cob
PNP
NPN
Figure 7. Small−Signal Current Gain
10,000
1.0
f, FREQUENCY (kHz)
10
20 50 100 200 10002.0 5.0 10
3000
500
100
TC = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
1000
PNP
NPN
Figure 8. Capacitance
50
500
hfe , SMALL-SIGNAL CURRENT GAIN
5000
2000
300
200
30
20
200
nasorfic 25% vHE @ vCE : 4.0V : 2le
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
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6
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
20,000
0.1
Figure 9. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
200 0.2 0.3 0.5 1.0 2.0 10
500
1000
300
hFE, DC CURRENT GAIN
2000
3000
VCE = 4.0 V
0.7 3.0
NPN
TIP120, TIP121, TIP122
PNP
TIP125, TIP126, TIP127
Figure 10. Collector Saturation Region
3.0
0.3
IB, BASE CURRENT (mA)
1.0 0.5 1.0 2.0 10 30
1.8
IC = 2.0 A
TJ = 25°C
4.0 A
2.2
2.6
0.7 5.0
3.0
0.1
IC, COLLECTOR CURRENT (AMP)
0.2 0.3 0.5 1.0 2.0 5.0 10
2.5
2.0
1.5
1.0
0.5
TJ = 25°C
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
V, VOLTAGE (VOLTS)
Figure 11. “On” Voltages
VBE @ VCE = 4.0 V
3.0
10,000
5000 TJ = 150°C
25°C
-55°C
20
IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN
VCE = 4.0 V
TJ = 150°C
25°C
-55°C
1.4
6.0 A
IB, BASE CURRENT (mA)
TJ = 25°C
IC, COLLECTOR CURRENT (AMP)
V, VOLTAGE (VOLTS)
TJ = 25°C
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
VBE @ VCE = 4.0 V
5.0 7.0
20,000
0.1
200 0.2 0.3 0.5 1.0 2.0 10
500
1000
300
2000
3000
0.7 3.0
10,000
5000
5.0 7.0
7000
700
3.0 7.0
3.0
0.3
1.0 0.5 1.0 2.0 10 30
1.8
2.2
2.6
0.7 5.0 20
1.4
3.0 7.0
IC = 2.0 A 4.0 A 6.0 A
0.7 7.0
3.0
0.1 0.2 0.3 0.5 1.0 2.0 5.0 10
2.5
2.0
1.5
1.0
0.5 3.00.7 7.0
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TO−220
CASE 221A−09
ISSUE AJ
DATE 05 NOV 2019
SCALE 1:1
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
4. EMITTER
STYLE 3:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
STYLE 7:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. ANODE
STYLE 10:
PIN 1. GATE
2. SOURCE
3. DRAIN
4. SOURCE
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 8:
PIN 1. CATHODE
2. ANODE
3. EXTERNAL TRIP/DELAY
4. ANODE
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 9:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 11:
PIN 1. DRAIN
2. SOURCE
3. GATE
4. SOURCE
STYLE 12:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. NOT CONNECTED
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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