The EPC9066 development board is a 40 V maximum device voltage, 2.7 A maximum output current, half bridge with onboard gate drives

The EPC9051 is a high efficiency, differential mode class-E amplifier demonstration board that can operate up to 15 MHz. This board may also be used for applications where a low side switch is utilized. Examples include, and are not limited to, push-pull converters, current-mode Class D amplifiers, common source bi-directional switch, and generic high voltage narrow pulse width applications such as LiDAR.

The EPC9001 development board is a 40 V maximum device voltage, 15 A maximum output current, half bridge with onboard gate drives

The PWD13F60 is a high density power driver integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration. The integrated power MOSFETs have a low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage.

The EPC9084 development board is a 350 V maximum device voltage, 4 A maximum output current, half bridge with onboard gate drives, featuring two EPC2050 enhancement mode (eGaN) field effect transistors (FETs). The purpose of this development board is to simplify the evaluation process of the EPC2050 eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.

The EPC9048 development boards are in a half bridge topology with onboard gate drives, featuring the EPC2034 eGaN field effect transistors (FETs).

Evaluation board for the "Inverter Power H-IC" highly integrated device containing all High Voltage (HV) control from HV-DC to 3-phase outputs in a single small SIP module.

This development board, measuring 11mm x 12mm, contains two enhancement mode (eGaN®) field effect transistors (FETs) arranged in a half bridge configuration with an onboard Texas Instruments LM5113 gate drive.

The EPC9080 development board is a 100 V maximum device voltage,30 A maximum output current, half bridge with onboard gate drives

The EPC9013 development board features the 100 V EPC2001C enhancement mode (eGaN®) field effect transistor (FET) operating up to a 35 A maximum