eGaN FET's Characteristics

eGan® FET's Characteristics

EPC

This tutorial covers the operation of EPC’s enhancement mode gallium nitride transistors.  To explain the eGaN devices’ ease-of-use, it is necessary to first understand how the device operates and highlight both the similarities and differences versus current power MOSFETs.

Related Parts

BildTillverkarens artikelnummerBeskrivningFunktionInbäddadAnvänd IC / komponentAvailable QuantityPrisVisa detaljer
EVAL BOARD FOR EPC2015EPC9001EVAL BOARD FOR EPC2015Drivkrets till halv H-brygga (extern FET)NejEPC20150 - Immediate$850.50Visa detaljer
EVAL BOARD FOR EPC2001EPC9017EVAL BOARD FOR EPC2001Drivkrets till halv H-brygga (extern FET)NejEPC20010 - Immediate$1,122.19Visa detaljer
EVAL BOARD FOR EPC8007EPC9027EVAL BOARD FOR EPC8007Drivkrets till halv H-brygga (extern FET)NejEPC80070 - Immediate$1,358.44Visa detaljer
EVAL BOARD FOR EPC2001EPC9002EVAL BOARD FOR EPC2001Drivkrets till halv H-brygga (extern FET)NejEPC20010 - Immediate$850.50Visa detaljer
PTM Published on: 2010-10-06

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Related Product Training Modules

Driving eGaN FETs with the LM5113 The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.
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eGaN® Basics The basics of EPC’s enhancement mode gallium nitride (eGaN) transistors.