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TP65H SuperGaN™ 650 V 35 mΩ and 240 mΩ FETs
Transphorm’s JEDEC-qualified Gen IV FETs are offered in TO-247 and PQFN packages
Transphorm’s 650 V SuperGaN™ Gen IV FETs include two robust JEDEC-qualified devices. The TP65H035G4WS offers a typical on-resistance of 35 mΩ in a TO-247 package. The TP65H300G4LSG offers a typical on-resistance of 240 mΩ in a PQFN88 package. Power systems using SuperGaN FETs can reach greater than 99% efficiency when used with bridgeless totem-pole power factor correction (PFC). Benefits include an improved figure of merit of ~10%; enhanced inrush current capabilities; and easier designability given switching node snubbers at high operation currents are no longer required.
TP65H SuperGaN™ 650 V 35 mΩ and 240 mΩ FETs
| Bild | Tillverkarens artikelnummer | Beskrivning | Ström - kontinuerlig drain (Id) @ 25°C | Rds On (max) @ Id, Vgs | Vgs(th) (Max) @ Id | Available Quantity | Pris | Visa detaljer | |
|---|---|---|---|---|---|---|---|---|---|
 |  | TP65H035G4WS | GANFET N-CH 650V 46.5A TO247-3 | 46,5 A (Tc) | 41 mOhm vid 30A, 10V | 4,8V vid 1mA | 617 - Immediate | $179.46 | Visa detaljer |
|  | TP65H300G4LSG-TR | GANFET N-CH 650V 6.5A 3PQFN | 6,5 A (Tc) | 312mOhm vid 5A, 8V | 2,6V vid 500µA | 0 - Immediate | See Page for Pricing | Visa detaljer |
Published: 2020-07-28
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