EPC Efficient Power Conversion
- EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
The EPC9130 development board is a 500 kHz switching frequency, 48 V nominal input voltage, 60 A maximum output current, 5-phase intermediate bus converter (IBC) with onboard microcontroller and gate drives, featuring the 100 V EPC2045 enhancement mode (eGaN®) field effect transistor. Learn More
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EPC Development Tools simplify the evaluation process of EPC’s GaN power transistors by including all the critical components on a single board that can be easily connected into any existing system.
EPC eGaN FETs give the design engineer a whole new spectrum of performance compared with silicon power MOSFETs.
Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2014 from EPC is smaller and has superior switching performance.
The EPC9101 demonstration board from EPC is a 1.2 V output, 1 MHz buck converter with an 18 A maximum output current and 8 V to 19 V input voltage range.
Designed to provide design engineers with information on how to design more efficient power conversion systems.
Featuring the EPC2001 enhancement mode FETs, the EPC9102 demo board incorporates the first eGaN FET specific integrated circuit driver.
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eGan® power FETs offer performance enhancements well beyond the realm of silicon-based MOSFETs.Duration: 5 minutes
The operation of EPC’s enhancement mode gallium nitride transistors.Duration: 5 minutes
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Efficient Power Conversion (EPC) designs, develops, markets, and sells Gallium Nitride based power management devices using mature silicon foundries.
In this video EPC demonstrates what power and efficiency levels are readily realizable using eGaN FETs in a buck converter for high power envelope tracking applications.