Name: SIHU5N80AE-GE3
Brand: Vishay Siliconix
SKU: 742-SIHU5N80AE-GE3-ND
Price: 20.4375 SEK
Availability: InStock

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SIHU5N80AE-GE3
cms-digikey-product-number	742-SIHU5N80AE-GE3-ND
cms-manufacturer	Vishay Siliconix
cms-manufacturer-product-number	SIHU5N80AE-GE3
cms-description	MOSFET N-CH 800V 4.4A TO251AA
cms-standard-lead-time	25 Weeks
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cms-detailed-description	N-Channel 800 V 4.4A (Tc) 62.5W (Tc) Through Hole TO-251AA
cms-datasheet	cms-datasheet

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cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.35Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16.5 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	321 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	62.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-251AA
Package / Case	TO-251-3 Short Leads, IPAK, TO-251AA
Base Product Number	SIHU5

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In-Stock: 2 870

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Tube