TRS6E65C,S1Q
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TRS6E65H,S1Q

DigiKey Part Number
264-TRS6E65H,S1Q-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TRS6E65H,S1Q
Description
DIODE SIL CARBIDE 650V 6A TO220L
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
Diode 650 V 6A Through Hole TO-220-2L
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
-
Packaging
Tube
Part Status
Active
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
6A
Voltage - Forward (Vf) (Max) @ If
1.35 V @ 6 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
70 µA @ 650 V
Capacitance @ Vr, F
392pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220-2L
Operating Temperature - Junction
175°C
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In-Stock: 188
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Quantity
All prices are in SEK
Tube
QuantityUnit PriceExt Price
1kr 29,30000kr 29,30
50kr 16,30120kr 815,06
100kr 15,46590kr 1 546,59
500kr 12,62804kr 6 314,02
1 000kr 11,71649kr 11 716,49
2 000kr 11,45813kr 22 916,26
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:kr 29,30000
Unit Price with VAT:kr 36,62500