Name: TPN4R806PL,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: 264-TPN4R806PLL1QTR-ND
Price: 17.225 SEK
Availability: OutOfStock

N-Channel 60 V 72A (Tc) 630mW (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TPN4R806PL,L1Q
DigiKey Part Number	264-TPN4R806PLL1QTR-ND - Tape & Reel (TR) 264-TPN4R806PLL1QCT-ND - Cut Tape (CT) 264-TPN4R806PLL1QDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TPN4R806PL,L1Q
Description	MOSFET N-CH 60V 72A 8TSON
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 60 V 72A (Tc) 630mW (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
Datasheet	Datasheet
EDA/CAD Models	TPN4R806PL,L1Q Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2.5V @ 300µA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Series U-MOSIX-H	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 2770 pF @ 30 V
Part Status Active	Power Dissipation (Max) 630mW (Ta), 104W (Tc)
FET Type N-Channel	Operating Temperature 175°C
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 60 V	Supplier Device Package 8-TSON Advance (3.1x3.1)
Current - Continuous Drain (Id) @ 25°C 72A (Tc)	Package / Case 8-PowerVDFN
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number TPN4R806
Rds On (Max) @ Id, Vgs 3.5mOhm @ 36A, 10V