Name: TPN1110ENH,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPN1110ENHL1QTR-ND
Price: 27.1375 SEK
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TPN1110ENH,L1Q
DigiKey Part Number	TPN1110ENHL1QTR-ND - Tape & Reel (TR) TPN1110ENHL1QCT-ND - Cut Tape (CT) TPN1110ENHL1QDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TPN1110ENH,L1Q
Description	MOSFET N-CH 200V 7.2A 8TSON
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 200 V 7.2A (Ta) 700mW (Ta), 39W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
Datasheet	Datasheet
EDA/CAD Models	TPN1110ENH,L1Q Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 200µA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V
Series U-MOSVIII-H	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 100 V
Part Status Active	Power Dissipation (Max) 700mW (Ta), 39W (Tc)
FET Type N-Channel	Operating Temperature 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 200 V	Supplier Device Package 8-TSON Advance (3.1x3.1)
Current - Continuous Drain (Id) @ 25°C 7.2A (Ta)	Package / Case 8-PowerVDFN
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number TPN1110
Rds On (Max) @ Id, Vgs 114mOhm @ 3.6A, 10V