N-Channel 650 V 53A (Tc) 197W (Tc) Through Hole PG-TO247-4-3
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IMZA65R030M1HXKSA1

DigiKey Part Number
448-IMZA65R030M1HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMZA65R030M1HXKSA1
Description
SILICON CARBIDE MOSFET, PG-TO247
Customer Reference
Detailed Description
N-Channel 650 V 53A (Tc) 197W (Tc) Through Hole PG-TO247-4-3
Datasheet
 Datasheet
EDA/CAD Models
IMZA65R030M1HXKSA1 Models
Product Attributes
Type
Description
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Category
Mfr
Series
Packaging
Tube
Part Status
Not For New Designs
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
42mOhm @ 29.5A, 18V
Vgs(th) (Max) @ Id
5.7V @ 8.8mA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 18 V
Vgs (Max)
+20V, -2V
Input Capacitance (Ciss) (Max) @ Vds
1643 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
197W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-4-3
Package / Case
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In-Stock: 13
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Not recommended for new design, minimums may apply
All prices are in SEK
Tube
QuantityUnit PriceExt Price
1kr 107,89000kr 107,89
30kr 64,95700kr 1 948,71
120kr 55,55158kr 6 666,19
510kr 54,55586kr 27 823,49
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:kr 107,89000
Unit Price with VAT:kr 134,86250