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BSZ160N10NS3GATMA1 N-Channel 100V 8A (Ta), 40A (Tc) 2.1W (Ta), 63W (Tc) Surface Mount PG-TSDSON-8
Price & Procurement
 

Quantity
All prices are in SEK.
Price Break Unit Price Extended Price
1 15,33000 15,33 kr
10 13,57300 135,73 kr
100 10,72810 1.072,81 kr
500 8,31938 4.159,69 kr
1 000 6,56794 6.567,94 kr

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number BSZ160N10NS3GATMA1CT-ND
Copy   BSZ160N10NS3GATMA1CT-ND
Quantity Available 45 471
Can ship immediately
Manufacturer

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Manufacturer Part Number

BSZ160N10NS3GATMA1

Copy   BSZ160N10NS3GATMA1
Description MOSFET N-CH 100V 40A TSDSON-8
Copy   MOSFET N-CH 100V 40A TSDSON-8
Detailed Description

N-Channel 100V 8A (Ta), 40A (Tc) 2.1W (Ta), 63W (Tc) Surface Mount PG-TSDSON-8

Copy   N-Channel 100V 8A (Ta), 40A (Tc) 2.1W (Ta), 63W (Tc) Surface Mount PG-TSDSON-8
Product Attributes Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging ? Cut Tape (CT) ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 8A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 12µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 50V
FET Feature -
Power Dissipation (Max) 2.1W (Ta), 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8
Package / Case 8-PowerTDFN
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 1
Other Names BSZ160N10NS3 GINCT
BSZ160N10NS3 GINCT-ND
BSZ160N10NS3GATMA1CT
Alternate Package | This part is also available in the following packaging:

23:06:45 4-22-2019