Single IGBTs

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Mfr Part #
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Series
Package
Product Status
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-247-3 HiP
STGW80H65DFB
IGBT TRENCH FS 650V 120A TO-247
STMicroelectronics
602
In Stock
1 : kr 56,94000
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Trench Field Stop
650 V
120 A
240 A
2V @ 15V, 80A
469 W
2.1mJ (on), 1.5mJ (off)
Standard
414 nC
84ns/280ns
400V, 80A, 10Ohm, 15V
85 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
IHW15N120R3FKSA1
IKW75N60TFKSA1
IGBT TRENCH FS 600V 80A TO247-3
Infineon Technologies
0
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1 : kr 69,77000
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600 V
80 A
225 A
2V @ 15V, 75A
428 W
4.5mJ
Standard
470 nC
33ns/330ns
400V, 75A, 5Ohm, 15V
121 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-1
TO-247-3
IXXH75N60B3D1
IGBT PT 600V 160A TO-247AD
IXYS
0
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1 : kr 89,47000
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PT
600 V
160 A
300 A
1.85V @ 15V, 60A
750 W
1.7mJ (on), 1.5mJ (off)
Standard
107 nC
35ns/118ns
400V, 60A, 5Ohm, 15V
25 ns
-
Through Hole
TO-247-3
TO-247AD (IXXH)
TO-247-3
IXXH75N60C3
IGBT PT 600V 150A TO-247AD
IXYS
0
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300 : kr 42,74220
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PT
600 V
150 A
300 A
2.3V @ 15V, 60A
750 W
1.6mJ (on), 800µJ (off)
Standard
107 nC
35ns/90ns
400V, 60A, 5Ohm, 15V
-
-
Through Hole
TO-247-3
TO-247AD (IXXH)
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Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.