Single IGBTs

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
PG-TO247-3
IKW30N60DTPXKSA1
IGBT TRENCH FS 600V 53A TO247-3
Infineon Technologies
1 209
In Stock
1 : kr 27,97000
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Trench Field Stop
600 V
53 A
90 A
1.8V @ 15V, 30A
200 W
710µJ (on), 420µJ (off)
Standard
130 nC
15ns/179ns
400V, 30A, 10.5Ohm, 15V
76 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
TO-247-3 AD EP
FGH60N60SMD
IGBT FIELD STOP 600V 120A TO-247
onsemi
488
In Stock
54 450
Factory
1 : kr 68,13000
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Field Stop
600 V
120 A
180 A
2.5V @ 15V, 60A
600 W
1.26mJ (on), 450µJ (off)
Standard
189 nC
18ns/104ns
400V, 60A, 3Ohm, 15V
39 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
IHW15N120R3FKSA1
IKW30N60H3FKSA1
IGBT TRENCH FS 600V 60A TO247-3
Infineon Technologies
285
In Stock
1 : kr 32,13000
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Trench Field Stop
600 V
60 A
120 A
2.4V @ 15V, 30A
187 W
1.38mJ
Standard
165 nC
21ns/207ns
400V, 30A, 10.5Ohm, 15V
38 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-1
IHW15N120R3FKSA1
IKW50N60H3FKSA1
IGBT TRENCH FS 600V 100A TO247-3
Infineon Technologies
529
In Stock
1 : kr 53,20000
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Trench Field Stop
600 V
100 A
200 A
2.3V @ 15V, 50A
333 W
2.36mJ
Standard
315 nC
23ns/235ns
400V, 50A, 7Ohm, 15V
130 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-1
TO-247-3
IXXH30N60B3D1
IGBT PT 600V 60A TO-247AD
IXYS
629
In Stock
1 : kr 68,70000
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PT
600 V
60 A
115 A
1.85V @ 15V, 24A
270 W
550µJ (on), 500µJ (off)
Standard
39 nC
23ns/97ns
400V, 24A, 10Ohm, 15V
25 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXXH)
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Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.