Add To Favorites
Product Overview
Digi-Key Part Number IRFD123PBF-ND
Quantity Available 2 291
Can ship immediately
Manufacturer

Manufacturer Part Number

IRFD123PBF

Description MOSFET N-CH 100V 1.3A 4-DIP
Expanded Description N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 11 Weeks
Documents & Media
Datasheets IRFD123
Video File MOSFET Technologies for Power Conversion
Catalog Page 1269 (EU2011-EN PDF)
Product Attributes Select All
Categories
Manufacturer

Vishay Siliconix

Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1.3W (Ta)
Rds On (Max) @ Id, Vgs 270 mOhm @ 780mA, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)
 
Additional Resources
Standard Package ? 2 500
Other Names *IRFD123PBF

13:14:54 2-23-2017

Price & Procurement
 

Quantity
All prices are in SEK.
Price Break Unit Price Extended Price
1 11,83000 11,83
10 10,57300 105,73
25 10,03520 250,88
100 8,24320 824,32
250 7,70560 1 926,40
500 6,80960 3 404,80
1 000 5,37600 5 376,00
2 500 5,01760 12 544,00
5 000 4,76672 23 833,60

Submit a request for quotation on quantities greater than those displayed.

Send Feedback