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Product Overview
Digi-Key Part Number IRF3703PBF-ND
Quantity Available 3 169
Can ship immediately
Manufacturer

Manufacturer Part Number

IRF3703PBF

Description MOSFET N-CH 30V 210A TO-220AB
Expanded Description N-Channel 30V 210A (Tc) 3.8W (Ta), 230W (Tc) Through Hole TO-220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks
Documents & Media
Datasheets IRF3703PbF
Other Related Documents Part Number Guide
Product Training Modules High Voltage Integrated Circuits (HVIC Gate Drivers)
Discrete Power MOSFETs 40V and Below
Featured Product Data Processing Systems
PCN Packaging Package Drawing Update 19/Aug/2015
Catalog Page 1258 (EU2011-EN PDF)
Product Attributes Select All
Categories
Manufacturer

Infineon Technologies

Series HEXFET®
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 209nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 8250pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 230W (Tc)
Rds On (Max) @ Id, Vgs 2.8 mOhm @ 76A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
 
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Additional Resources
Standard Package ? 50
Other Names *IRF3703PBF
SP001574662

23:35:17 3-27-2017

Price & Procurement
 

Quantity
All prices are in SEK.
Price Break Unit Price Extended Price
1 35,03000 35,03
10 31,44100 314,41
100 25,75730 2 575,73
500 21,92674 10 963,37
1 000 18,49236 18 492,36

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